2N6543 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
比赛名单
2N6543 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6542 2N6543
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6542
2N6543
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1.0A
VBEsat
ICEV
IEBO
Base-emitter saturation voltage
Collector cut-off current
2N6542
2N6543
Emitter cut-off current
IC=3A; IB=0.6A
VCE=650V; VBE(off)=1.5V
TC=100℃
VCE=850V; VBE(off)=1.5V
TC=100℃
VEB=8V; IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
fT
Trainsistion frequency
IC=0.2A ; VCE=10V;f=1MHz
Switching times
td
Delay time
tr
Rise time
tstg
Storage time
VCC=250V; IC=3.0A
IB1=-IB2=0.6A;tp=0.1ms
tf
Fall time
MIN TYP. MAX UNIT
300
V
400
1.0
V
5.0
V
1.4
V
0.5
3.0
mA
0.5
3.0
1.0
mA
12
60
7
35
6
35 MHz
0.05 μs
0.7
μs
4.0
μs
0.8
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W
2
Share Link: 