EGP30A 查看數據表（PDF） - New Jersey Semiconductor

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EGP30A

3 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier

New Jersey Semiconductor 

^£.m,L-L.onauctoi Lpioaucti.,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

3 Amp. Glass Passivated Avalanche Ultrafast Recovery Eectifiet

Dimensions in mm.

DO-201AD

(Plastic)

Voltage

50 to 600V

Current

3 A at 55 °C.

Mounting instructions

1. Min. distance from body to soldering point,

4 mm.

2. Max. solder temperature, 350 °C.

3. Max.soldering time, 3.5 sec.

4. Do not bend lead at a point closer than

3 mm. to the body

• Glass Passivated Junction

• High current capability

• The plastic material carries

U/L recognition 94 V-0

• Terminals: Axial Leads

• Polarity: Color band denotes cathode

Maximum Ratings, according to IECpublication No. 134

EGF30A EGP30B EGF30D EGP30F EGF30G EGP30J

VRRM Peak Recurrent reverse voltage (V)

VRMS Maximum RMSvoltage

VDC Maximum DC blocking voltage

^F(AV) Forward current at Tamb = 55 °C

IFRM Recurrent peak forward current

IFSM

8.3 ms. peak forward surge current

(Jedec Method)

Max. reverse recovery time from

trr

I F = 0 . 5 A ; I R = 1 A ; 1^ = 0.25 A

q

Typical Junction Capacitance at 1MHz

and reverse voltaje of 4VDC

T, Operating temperature range

T•'•stg Storage temperature range

Maximum non repetitive peak

-t-RSM reverse avalanche energy

IR = 1A ; Tj = 25 °C

50 100 200 300 4(30 600

35 70 140 210 2f30 420

50 100 200 300 4(30 600

3A

30 A

125A

50ns

90 pF

45 PF

- 6 5 t o + 150°C

- 6 5 t o + 150 °C

20 mj

Electrical Characteristics at Tamb = 25 °C

VF Max. forward voltage drop at IF - 3 A

Max. reverse current atV^ at ^5 °C

IR

Rthj-a Max. thermal resistance ( 1 = 1 0 mm.)

0.95V

5pA

50 p A

30°C/W

1,25V

Quality Semi-Conductors

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