DF685 查看數據表（PDF） - Dynex Semiconductor

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DF685

Fast Recovery Diode

Dynex Semiconductor 

100000

10000

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

Conditions:

Tj = 150˚C,

VR = 100V

1000

IF = 4000A

IF = 2000A

IF = 1000A

IF = 200A IF = 500A

IF = 100A

100

1

10000

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

Fig. 4 Recovered charge

1000

Conditions:

Tj = 150˚C,

VR = 100V

1000

100

IF = 4000A

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

DF685

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig. 5 Typical reverse recovery current vs rate of rise of reverse current

5/8

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