NTE2514 查看數據表（PDF） - NTE Electronics

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NTE2514

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2513

NTE2514

Cob

VCB = 10V, f = 1MHz

– 65 – pF

– 95 – pF

Collector Emitter Saturation Voltage

NTE2513

NTE2514

VCE(sat)

IC = 4A, IB = 200mA

– 200 400 mV

– 250 500 mV

Base Emitter Saturation Voltage

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2513

NTE2514

VBE(sat) IC = 4A, IB = 200mA

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 10µA, IC = 0

ton VCC = 25V, VBE = –5V,

tstg

10IB1 = –10IB2 = IC = 4A,

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

– 0.95 1.3 V

60 – – V

50 – – V

6––V

– 50 – ns

– 500 – ns

– 450 – ns

Fall Time

tf

– 20 – ns

Note 1. For NTE2514, the polarity is reversed.

.315 (8.0)

.106 (2.7)

C

E

B

.433

(11.0)

.610

(15.5)

.094 (2.4)

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