NTE2526 查看數據表（PDF） - NTE Electronics

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NTE2526

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

NTE2526

VCE(sat)

IC = 2A, IB = 200mA

– 150 400 mV

NTE2527

– 200 500 mV

Base–Emitter Saturation Voltage

VBE(sat) IC = 2A, IB = 200mA

– 0.9 1.2 V

Collector–Base Breakdown Voltage

V(BR)CBO IC = 10µA, IE = 0

120 –

–V

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

100 –

–V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 10µA, IC = 0

6

–

–V

Turn–On Time

Storage Time

NTE2526

ton

VCC = 50V, VBE = –5V,

tstg

10IB1 = –10IB2 = IC =2A,

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

– 100 – ns

– 900 – ns

NTE2527

– 800 – ns

Fall Time

tf

50

ns

Note 1. For NTE2527, the polarity is reversed.

.256 (6.5)

.197 (5.0)

.090 (2.3)

.059 (1.5)

.275

(7.0)

BCE

.295

(7.5)

.090 (2.3)

.002 (0.5)

.002(0.5)

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