NTE254 查看數據表（PDF） - NTE Electronics

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NTE254

Silicon Complementary Transistors Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

NTE253

NTE254

NTE253 & NTE253

Collector–Emitter Saturation Voltage

NTE253

NTE254

NTE253 & NTE254

Base–Emitter ON Voltage

NTE253

NTE254

NTE253 & NTE254

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

VCE = 3V, IC = 1.5A

VCE = 3V, IC = 2A

VCE = 3V, IC = 4A

IC = 1.5A, IB = 30mA

IC = 2.0A, IB = 40mA

IC = 4.0A, IB = 40mA

VCE = 3V, IC = 1.5A

VCE = 3V, IC = 2.0A

VCE = 3V, IC = 4.0A

750 2000 –

750 2000 –

100 –

–

–

–

2.5

V

–

–

2.8

V

–

–

3.0

V

–

–

2.5

V

–

–

2.5

V

–

–

3.0

V

Small–Signal Current Gain

|hfe| VCE = 3V, IC = 1.5A, f = 1MHz

1.0

–

–

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and

NTE254 (PNP).

NTE253

C

B

.450

(11.4)

Max

.330 (8.38)

Max

.175

(4.45)

Max

E

NTE254

C

B

E

.655

(16.6)

Max

EC B

.118 (3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

.090 (2.28)

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