NTE2538 查看數據表（PDF） - NTE Electronics

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NTE2538

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gain–Bandwidth Product

fT VCE = 10V, IC = 2A

– 20

Output Capacitance

Cob VCB = 10V, f = 1MHz

– 230

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

500 –

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞

400 –

Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0

7–

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 8A, IB1 = 0.8A, IB2 = –3.2A, 400 –

L = 200µH Clamped

– MHz

– pF

–V

–V

–V

–V

Turn–On Time

Storage Time

Fall Time

ton IC = 12A, IB1 = 2.4A,

tstg

IB2 = –4.8A, RL = 10Ω,

VCC = 200V

tf

– – 0.5 µs

– – 2.5 µs

– – 0.3 µs

.123 (3.1)

.221 (5.6)

.134 (3.4) Dia

.630 (16.0)

.315

(8.0)

.866

(22.0)

BCE

.158 (4.0)

.804

(20.4)

.215 (5.45)

.040 (1.0)

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