NTE2535 查看數據表（PDF） - NTE Electronics

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NTE2535

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

90 – – V

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

80 – – V

Emitter–Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2534

NTE2535

V(BR)EBO IE = 1mA, IC = 0

ton VCC = 50V,

10IB1 = –10IB2 = IC = 5A,

tstg

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

6 – –V

– 0.2 – µs

– 0.7 – µs

– 1.7 – µs

Fall Time

NTE2534

tf

NTE2535

– 0.1 – µs

– 0.2 – µs

Note 1. For NTE2535, the polarity is reversed.

.190 (4.82)

.615 (15.62)

.787

(20.0)

.591

(15.02)

.126 (3.22) Dia

.787

(20.0)

B

C/

E

Case

.215 (5.47)

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