1N4148M 查看數據表（PDF） - Continental Device India Limited
零件编号
产品描述 (功能)
比赛名单
1N4148M Datasheet PDF : 3 Pages
| |||
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL PLANAR DIODE
1N4148M
DO-34
Glass Package
Fast Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Reverse Voltage
Peak Reverse Voltage
SYMBOL
VR
VRM
Rectified Current (Average) Half Wave
Rectification with Resist. Load at Tamb=25 ºC and *IO
f > 50Hz
Surge Forward Current at t <1s and Tj=25ºC
Power Dissipation at Tamb=25ºC
Junction Temperature
Storage Temperature Range
IFSM
*ptot
Tj
Tstg
VALUE
50
60
130
500
400
200
- 65 to +200
*Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Forward Voltage
VF
IF=100mA
Leakage Current
IR
VR=50V
Reverse Breakdown Voltage
V(BR)R
IR=100µA
60
Diode Capacitance
Ctot
VR=0
Reverse Recovery Time
When Switched from
trr
IF=10mA to IR=1mA,
VR=6V, RL=100Ω,
UNIT
V
V
mA
mA
mW
ºC
ºC
MAX
1.1
0.5
3.0
UNIT
V
µA
V
pF
4.0
ns
1N4148M Rev090606E
Continental Device India Limited
Data Sheet
Page 1 of 3
Share Link: 