BAS70T 查看數據表（PDF） - Diode Semiconductor Korea
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BAS70T Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Surface Mount Schottky Barrier Diode BAS70T/-04T/-05T/-06T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
IR=10μA
70
Leakage current
IR
Forward voltage
VF
Typical total capacitance
CT
Reverse recovery Time
trr
VR=50V,tp<300μs
IF=1.0mA,tp<300μS
IF=15mA,tp<300μS
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
100
410
1000
2.0
5.0
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
UNIT
V
nA
mV
pF
ns
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