BAV19WS 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

BAV19WS

Small Signal Switching Diodes, High Voltage

Vishay Semiconductors 

www.vishay.com

BAV19WS, BAV20WS, BAV21WS

Vishay Semiconductors

1000

100

10

1

0.1

0

18862_3

Reverse Voltage

BAV19WS VR = 100 V

BAV20WS VR = 150 V

BAV21WS VR = 200 V

40

80 120 160 200

Tj - Junction Temperature (°C)

Fig. 5 - Leakage Current vs. Junction Temperature

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.1

18863

Tj = 25 ° C

1

10

100

VR - Reverse Voltage (V)

Fig. 6 - Capacitance vs. Reverse Voltage

0.40 [0.016]

0.25 [0.010]

Cathode bar

1.95 [0.077]

1.60 [0.063]

2.85 [0.112]

2.50 [0.098]

Footprint recommendation:

0.8 [0.031]

0.8 [0.031]

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Rev. 6 - Date: 23.Sept.2016

17443

1.6 [0.063]

Rev. 2.2, 12-Jul-17

3

Document Number: 85726

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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