BAV199 查看數據表（PDF） - Diode Semiconductor Korea
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BAV199 Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Dual surface mount low leakage diode
BAV199
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage
V(BR) IR= 100μA
85
Reverse voltage leakage current
Forward voltage
Junction capacitance
IR
VR=75V
VR=75V Tj=150℃
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
Cj
VR=0V f=1MHz
5.0
80
900
1000
1100
1250
2.0
Reverse recovery time
trr
IF=IR=10mA Irr=0.1*IR
RL=100Ω
3.0
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
UNIT
V
nA
nA
mV
pF
μS
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