6R520E6(2014) 查看數據表（PDF） - Infineon Technologies

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6R520E6
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

Table 15

Typ. transfer characteristics

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Typ. gate charge

ID=f(VGS); VDS=20V

Table 16

Avalanche energy

VGS=f(Qgate), ID=3.5 A pulsed

Drain-source breakdown voltage

EAS=f(Tj); ID=1.4 A; VDD=50 V

Final Data Sheet

VBR(DSS)=f(Tj); ID=0.25 mA

11

Rev. 2.02, 20104-0142-0190

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