MMBT2907A 查看數據表（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

零件编号

产品描述 (功能)

比赛名单

MMBT2907A

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Epitaxial planar die construction

Complementary NPN Type available(MMBT2222A)

MMBT2907A (PNP)

Marking:2F

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Parameter

Symbol

Value

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-60

Emitter-Base Voltage

VEBO

-5

Collector Current -Continuous

Collector Power Dissipation

IC

-600

PC

250

Thermal Resistance Junction to Ambient

RθJA

500

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55 to +150

Unit

V

V

V

mA

mW

℃/W

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Base cut-off current

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

Rise time

Storage time

Fall time

*Pulse test: tp≤300μS, δ≤0.02.

Symbol Test conditions

Min Typ Max Unit

VCBO

IC=-10μA,IE=0

-60

V

VCEO*

IC=-10mA,IB=0

-60

V

VEBO

IE=-10μA,IC=0

-5

V

ICBO

VCB=-50V,IE=0

-20

nA

IEBO

VCE=-3V, IC =0

-10

nA

ICEX

VCE=-30 V, VBE(off) =-0.5V

-50

nA

hFE(1)

VCE=-10V,IC=-150mA

100

300

hFE(2)

VCE=-10V,IC=-0.1mA

75

hFE(3)

VCE=-10V,IC=-1mA

100

hFE(4)

VCE=-10V,IC=-10mA

100

hFE(5)

VCE=-10V,IC=-500mA

50

VCE(sat)* IC=-150mA,IB=-15mA

-0.4

V

VCE(sat)* IC=-500mA,IB=-50mA

-1.6

V

VBE(sat)* IC=-150mA,IB=-15mA

-1.3

V

VBE(sat)* IC=-500mA,IB=-50mA

-2.6

V

fT

VCE=-20V,IC=-50mA,f=100MHz

200

MHz

td

tr

VCE=-30V,IC=-150mA,B1=-15mA

10

nS

25

nS

tS

VCE=-6V,IC=-150mA,

tf

IB1=- IB2=- 15mA

225

nS

60

nS

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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