BTS129 查看數據表（PDF） - Infineon Technologies

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BTS129

N-Channel TEMPFET®

Infineon Technologies 

Typ. gate-source leakage current

IGSS = f (TC)

Parameter: VGS = 20 V, VDS = 0

TEMPFET® BTS 129

Typ. capacitances C = f (VDS)

Parameter: VGS = 0, f = 1 MHz

Forward characteristics of reverse diode

IF = f (VSD)

Parameter: Tj, tp = 80 µs

Transient thermal impedance ZthJC = f (tp)

Parameter: D = tp/T

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19.02.04

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