IRF530 查看數據表（PDF） - Inchange Semiconductor
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IRF530 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF530
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
2
VGS= 10V; ID= 8.3A
VGS= ±20V;VDS= 0
4
V
0.18
Ω
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 14A; VGS=0
2.5
V
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
600
pF
250
pF
50
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
Tf
Fall Time
VDD=50V,ID=14A
VGS=10V
RGS=12Ω
RGEN=12Ω
MIN
TYP MAX UNIT
12
15
ns
35
51
ns
25
35
ns
25
36
ns
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