PN5179 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

比赛名单

PN5179

NPN RF Transistor

Fairchild Semiconductor 

MPS5179

MMBT5179

PN5179

C

C

BE

TO-92

SOT-23

Mark: 3C

E

B

C

EB

TO-92

NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers

with collector currents in the 100 µA to 30 mA range in common

emitter or common base mode of operation, and in low frequency

drift, high ouput UHF oscillators. Sourced from Process 40.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

VCBO

VEBO

IC

TJ, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

12

20

2.5

50

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Max

PN/MPS5179

350

2.8

357

*MMBT5179

225

1.8

556

Units

mW

mW/°C

°C/W

 1997 Fairchild Semiconductor Corporation

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