A1295 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

A1295

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1295

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

ICBO

Collector Cutoff Current

VCB= -230V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -5A; VCE= -4V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0; VCB= -10V;ftest= 1.0MHz

IE= 2A; VCE= -12V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -5A ,RL= 12Ω,

IB1= -IB2= -0.5A,VCC= -60V

MIN TYP. MAX UNIT

-230

V

-2.0 V

-100 μA

-100 μA

50

140

500

pF

35

MHz

0.35

μs

1.5

μs

0.3

μs

‹ hFE Classifications

O

Y

50-100 70-140

isc Website：www.iscsemi.cn

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