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SM6T7V5ACAY 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
比赛名单
SM6T7V5ACAY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SM6T7V5ACAY Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SM6TY
Characteristics
Figure 10. Junction capacitance versus reverse Figure 11. Junction capacitance versus
applied voltage for unidirectional
reverse applied voltage for
types (typical values)
bidirectional types (typical values)
C(pF)
10000
1000
SM6T6V8AY
F = 1 Mhz
VOSC = 30 mVRMS
Tj = 25 °C
10000 C(pF)
SM6T6V8CAY
F = 1 Mhz
VOSC = 30 mVRMS
Tj = 25 °C
SM6T30AY
1000
100
SM6T82AY
SM6T30CAY
10
1
VR(V)
100
10
100
1000
1
SM6T82CAY
VR(V)
10
100
1000
Figure 12. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
Figure 13. Thermal resistance junction to
ambient versus copper surface
under each lead
Zth (j-a)/Rth (j-a)
1.00
Recommended pad layout
Printed circuit board FR4, copper thickness = 35 µm
0.10
0.01
1.0E-03
1.0E-02
1.0E-01
tp s
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Rth(j-a) (°C/W)
110
100
90
Printed circuit board FR4,
copper thickness = 35 µm
80
70
60
50
40
30
20
10
SCu(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 14. Leakage current versus junction
temperature (typical values)
IR (nA)
1.E+03
1.E+02
VR=VRM
VRM < 10 V
1.E+01
Figure 15. Peak forward voltage drop versus
peak forward current
(typical values)
IFM(A)
1.0E+02
1.0E+01
1.0E+00
Tj =125 °C
Tj =25 °C
1.E+00
1.E-01
25
VR=VRM
VRM 10 V
50
75
100
1.0E-01
Tj (° C)
VFM(V)
1.0E-02
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Doc ID 17741 Rev 3
7/12

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