10030PK 查看數據表（PDF） - NXP Semiconductors.

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比赛名单

10030PK

PNP/PNP high power double bipolar transistor

NXP Semiconductors. 

NXP Semiconductors

PHPT610030PK

PNP/PNP high power double bipolar transistor

Symbol

Ptot

Per device

Ptot

Tj

Tamb

Tstg

Parameter

total power dissipation

Conditions

Tamb ≤ 25 °C

Min Max Unit

[1]

-

1

W

[2]

-

2.4 W

[3]

-

25

W

total power dissipation

junction temperature

ambient temperature

storage temperature

Tamb ≤ 25 °C

[1]

-

1.25 W

[2]

-

3

W

[4]

-

5

W

-

175 °C

-55 175 °C

-65 175 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Power dissipation from junction to mounting base.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

4

Ptot

(W)

3

aaa-014341

(1)

2

1

(2)

0

-75

0

75

Fig. 1.

(1) FR4 PCB, mounting pad for collector 6 cm2

(2) FR4 PCB, standard footprint

Per transistor: power derating curves

150

225

Tamb (°C)

PHPT610030PK

Product data sheet

All information provided in this document is subject to legal disclaimers.

22 October 2014

© NXP Semiconductors N.V. 2014. All rights reserved

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