S7412M 查看數據表（PDF） - New Jersey Semiconductor

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S7412M

35-A Silicon Controlled Rectifiers

New Jersey Semiconductor 

2N3654, 2N3655, 2N3656, 2N3657, 2N3658, S7412M

ELECTRICAL CHARACTERISTICS

At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (Tgl

CHARACTERISTIC

LIMITS

FOR ALL TYPES

Bxcept as Specified

MIN. TYP. MAX.

UNITS

'DOMorlROM:

vD = V D R O M o r V R = V R R O M ' T C = 1 2 0 c

2N3654 2N3655 2N3656 S7412M

2N3657

..

2N3658

-

2

6* mA

2

5.5*

2

4*

"T

ij • 25A (peak), TC = 25 C

-

1.5 2.05*

V

'HO'

Tc • 25°C

Tc = 65°C

dv/dt:

VD ~ ^DROM' exponential voltage rise, TQ » 120°C

(See Fig 1 6)

'cr

VD = 6 V ( d c ) RL = 4 n TQ = 25°C

VD = 6 V (dc), R|_ = 2 SJ Tc = -65°C

VGT:

Vrj - 6 V (dc) R |_ => 4 H TQ - 25 C

VD = 6 V (dc), R|_ => 200 JJ Tc - 120°C

Vn " 6 V (dc) Ri = 2 fi TC- 65°C

tq:

Rectangular Pulse

VDX = ^DROM> 17 • 10 A, pulse duration = 50 fis,

dv/dt = 200 V/fis, -di/dt = 5 A/jrt, IQJ * 200 mA

at turn-on, Vpj^ c 15 V minimum, VQ|^ - 0 V at

turn-off, Tc = 120°C (Sec Figs. 17 & 18)

Sinusoidal Pulse

^DX = ^DROM' 'T " '00 A, pulse duration = 2 /us,

dv/dt - 200 V/ps, V o x = 30 V minimum, VGK = 0

at turn-off TC • 115 C (SeeFigs, 19 & 20)

-

75

150

200

-

80

150

1.5

0.25

2

-

-

-

0,86

150

350*

mA

W/is

180

500*

mA

3

V

4.5*

10

MS

10

1.7* °C/W

* In accordance with JEDEC registration data lormal (JS-14, RDF-11 filed lor the JEDEC |2N terigi) tvpll-

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