IRF710 查看數據表（PDF） - Inchange Semiconductor
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IRF710 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF710
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
CONDITIONS
VGS= 0; ID= 0.25mA
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 1.1A
VGS= ±20V;VDS= 0
VDS= 400V; VGS=0
IS= 2.0A; VGS=0
VDS=25V,VGS=0V,
F=1.0MHz
MIN
TYP
MAX UNIT
400
V
2
4
V
3.6
Ω
±500
nA
250
uA
1.6
V
135
pF
35
pF
8
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=50V,ID=5.6A
VGS=10V,RGEN=24Ω
RGS=24Ω
Tf
Fall Time
MIN
TYP
MAX UNIT
8
12
ns
10
15
ns
21
32
ns
11
17
ns
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