BF840 查看數據表（PDF） - Infineon Technologies

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比赛名单

BF840

NPN Silicon RF Transistors

Infineon Technologies 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IB = 0

Collector-base cutoff current

VCB = 20 V, IE = 0

DC current gain, IC = 1 mA, VCE = 10 V

BF 840

BF 841

Base-emitter voltage

IC = 1 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 1 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Noise figure

IC = 1 mA, VCE = 10 V, f = 100 kHz

RS = 200 Ω

Output conductance

IC = 1 mA, VCE = 10 V, f = 0.5 MHz

BF 840

BF 841

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 40

V(BR) EB0 4

ICB0

–

hFE

65

35

VBE

–

–

–

V

–

–

–

100 nA

–

–

220

–

125

0.7 –

V

fT

–

380 –

MHz

Ccb

–

0.3 –

pF

F

–

1.7 –

dB

g22e

–

4

–

µS

Semiconductor Group

2

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