BS107 查看數據表（PDF） - Infineon Technologies

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BS107

SIPMOS® Small-Signal Transistor

Infineon Technologies 

BS 107

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

Values

Unit

-55 ... + 150 ˚C

-55 ... + 150

≤ 125

K/W

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 200 V, VGS = 0 V, Tj = 25 ˚C

VDS = 200 V, VGS = 0 V, Tj = 125 ˚C

VDS = 130 V, VGS = 0 V, Tj = 25 ˚C

VDS = 70 V, VGS = 0.2 V, Tj = 25 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 4.5 V, ID = 0.12 A

VGS = 2.8 V, ID = 0.02 A

V(BR)DSS

V

200

-

-

VGS(th)

0.8

1.5

2

IDSS

-

0.1

1

µA

-

2

60

-

-

30

nA

-

-

1

µA

IGSS

-

RDS(on)

-

nA

1

10

Ω

14

26

-

14.5

28

Data Sheet

2

05.99

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