1N4148WS 查看數據表（PDF） - Diode Semiconductor Korea

零件编号

产品描述 (功能)

比赛名单

1N4148WS

Silicon Epitaxial Planar Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Silicon Epitaxial Planar Diode

1N4148WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Symbol

V(BR)R

VF

Reverse Current

IR

Capacitance between

CT

terminals

Reverse Recovery Time

trr

Min Max Unit

75

-

V

-

0.715 V

0.855

1.0

1.25

-

1.0

μA

25

nA

-

2.0

pF

-

4.0

ns

Test Condition

IR=1.0μA

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=20V

VR=0,f=1.0MHz

IF=IR=10mA,

Irr=0.1×IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

www.diode.kr

Share Link: