BAV170 查看數據表（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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BAV170 Datasheet PDF : 3 Pages
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BAV170
Low-leakage Double Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Typ
MAX UNIT Test Condition
Forward Voltage
VF
900
1000
mV
1100
1250
IF=1mA
IF=10mA
IF=50mA
IF=100mA
Reverse Leakage Current
IR
Junction Capacitance
Cj
Reverse Recovery Time
trr
5
VR=75V
nA
80
VR=75V,TJ=150℃
2.0
pF
VR=0V,f=1.0MHz
3
μs
IF=IR=10mA,Irr=0.1*IR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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