MBR30200CT-1 查看數據表（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd
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MBR30200CT-1 Datasheet PDF : 6 Pages
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 15 A, Pulse, TJ = 25 °C
@ 15 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
MBR30200CT
MBRB30200CT
MBR30200CT-1
Green Products
Max.
0.90
0.70
1.0
6.0
400
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Symbol
TJ
Tstg
Condition
-
-
RθJC DC operation
Specification
-55 to +150
-55 to +150
Units
°C
°C
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Case Style
RθJA
RθCS
wt
DC operation
50
Mounting surface, smooth and
greased
0.50
-
2
TO-220AB D2PAK TO-262
°C/W
°C/W
g
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