1N4148 查看數據表（PDF） - HY ELECTRONIC CORP.
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1N4148 Datasheet PDF : 3 Pages
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1N4148
SMALL SIGNAL
SWITCHING DIODE
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
● These diodes are also available in glass case
DO-34,Mini-MELF
MECHANICAL DATA
●Case: DO-35 glass case
●Polarity: Color band denotes cathode
●Weight: 0.004 ounces , 0.13 grams
REVERSE VOLTAGE - 75 Volts
FORWARD CURRENT - 0.15Amperes
D0 - 35
1.083(27.5)
MIN
.020
(0.51) TYP.
.150(3.8)
MAX
.079 MAX
(2.0)
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
1N4148
Reverse Vltage
VR
75
Peak Reverse Voltage
VRM
100
Average Forward Rectified Current
Half Wave Rectification with Resist .load
IO
150
at Tamb=25℃ and f≧50HZ
Forward Surge Current at t＜1s and TJ=25℃
Power Dissipation at Tamb=25℃
IFSM
PTOT
500
500(1)
Junction Temperature
TJ
175
Storage Temperature Range
TSTG
﹣65 to﹢175
NOTE:(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
Forward Voltage at IF=10mA
Leakage Current
at VR=20V
at VR=75V
at VR=20V TJ=150℃
Capacitance at VF=VR=0V
Voltage Rise when Switching ON
tested with 50mA pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
VF
﹣
﹣
1
IR
-
﹣
25
IR
﹣
﹣
5
IR
﹣
﹣
50
Ctot
﹣
﹣
4
Vfr
﹣
-
2.5
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient
Rectification Effciency at 100MHZ VRF=2V
trr
﹣
﹣
RθJA
﹣
﹣
ηV
0.45
﹣
4
350(1)
﹣
NOTE:(1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
~ 413 ~
UNIT
V
V
mA
mA
mW
℃
℃
UNIT
V
uA
uA
uA
pF
v
ns
K/W
﹣
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