PR1001 查看數據表（PDF） - Diode Semiconductor Korea
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PR1001 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
PR1001---PR1007
FIG.1 -- FORWARD CURRENT DERATING CURVE
1.5
1.25
1.0
0.75
0.5
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
0.25
0
25
50
75 100
125
150 175
AMBIENT TEMPERATURE,
FIG.2 -- PEAK FORWARD SURGE CURRENT
40
30
20
10
0
1
TJ=125
8.3ms Single Half
Sine-Wave
2
5
10
20 50
100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.4 -- TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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