MBR1640CT 查看數據表（PDF） - Inchange Semiconductor
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MBR1640CT Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1640CT
FEATURES
·Low Forward Voltage
·150℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 100℃
40
28
V
40
16
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed
125
A
on rated load conditions
IRRM
Peak Repetitive Reverse Current
(2.0μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~175 ℃
isc website：www.iscsemi.cn
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