2N5197 查看數據表（PDF） - InterFET

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2N5197

N-Channel Dual Silicon Junction Field-Effect Transistor

InterFET  

8/2014

2N5196, 2N5197, 2N5198, 2N5199

N-Channel Dual Silicon Junction Field-Effect Transistor

∙ Differencial Inputs

At 25oC free air temperature

Static Electrical Characteristics

Gate Source Breakdown Voltage V(BR)GSS

Gate Reverse Current

Gate Source Cutoff Voltage

Drain Saturation Current

(pulsed)

IGSS

VGS(OFF)

IDSS

Dynamic Electrical Characteristics

Common-Source Forward

Transconductance

gfs

Common-Source Input

Capacitance

Ciss

Common-Source Reverse

Transfer Capacitance

Crss

Equivalent Short Circuit Input

Noise Voltage

~eN

Differencial Gate-Source

Voltage

Differencial Gate Source

Voltage with Temperature

(VGS1-VGS2)

Δ│VGS1-VGS2│

ΔT

Absolute maximum ratings at TA = 25oC

Reverse Gate Source & Gate Drain Voltage -50V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation 300 mW

Power Derating

2.6 mW/oC

Storage Temperature Range

-65oC to +150oC

2N5196, 2N5197, 2N5198, 2N5199

Min Typ Max Unit

-50

V

Process NJ16

Test Conditions

IG = -1 uA, VDS = 0 V

-25

pA

VGS = -10 V, VDS = 0 V

-0.7

-4

V

VDS = 10 V, VGS = 0 V

0.7

7

mA

VDS = 10 V, VGS = 0 V

1

4

mS VDS = 10 V, ID = 5 mA f = 1 kHz

6

pF VDS = -10 V, VGS = 1 V f = 1 MHz

2

pF VDS = 10 V, ID = 5 mA f = 1 MHz

20

nV/√Hz VDS = 10 V, ID = 5 mA f = 1 kHz

2N5196

2N5197

2N5198

2N5199

Unit

Min Max Min Max Min Max Min Max s

5

5

10

15 mV

5

10

20

40

μV/°

C

Test

Conditions

VDS = 10 V,

ID = -10 mA

VDG = 10 V,

ID = 30 μA

Surface Mount Version:

SMP5196, SMP5197,

SMP5198, SMP5199

715 N. Glenville Dr., Ste. 400

Richardson, TX 75089

(972) 238-9700 Fax (972) 238-5338

www.interfet.com

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