C4098(2009) 查看數據表（PDF） - ROHM Semiconductor

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C4098
(Rev.:2009)

High-frequency Amplifier Transistor (25V, 50mA, 300MHz)

ROHM Semiconductor 

High-frequency Amplifier Transistor

(25V, 50mA, 300MHz)

2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S

Features

1) Low collector capacitance. (Cob : Typ. 1.3pF)

2) Low rbb, high gain, and excellent noise characteristics.

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

50

mA

Collector 2SC5659, 2SC4618

0.15

power

2SC4098, 2SC2413K

PC

0.2

W

dissipation 2SC2058S

0.25

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

−55 to +150

˚C

Packaging specifications and hFE

Type

Package

hFE

Marking

Code

Basic ordering unit

(pieces)

∗ Denotes hFE

2SC5659

VMT3

P

A∗

T2L

2SC4618

EMT3

P

A∗

TL

2SC4098

UMT3

P

A∗

T106

2SC2413K 2SC2058S

SMT3

SPT

P

P

A∗

−

T146

TP

8000

3000

3000

3000

5000

Dimensions (Unit : mm)

2SC5659

1.2

0.2 0.8 0.2

(2)

(3)

(1)

ROHM : VMT3

0.15Max.

2SC4618

ROHM : EMT3

EIAJ : SC-75A

2SC4098

(1)

(3)

(2)

0.8

1.6

0.1Min.

(1) Base

(2) Emitter

(3) Collector

(1) Emitter

(2) Base

(3) Collector

1.25

2.1

ROHM : UMT3

EIAJ : SC-70

2SC2413K

0.1to0.4

Each lead has same dimensions

(1) Emitter

(2) Base

(3) Collector

1.6

2.8

ROHM : SMT3

EIAJ : SC-59

2SC5058S

0.3to0.6

Each lead has same dimensions

(1) Emitter

(2) Base

(3) Collector

4

2

ROHM : SPT

EIAJ : SC-72

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

BVCBO

40

−

−

V

IC=50μA

BVCEO

25

−

−

V

IC=1mA

BVEBO

5

−

−

V

IE=50μA

ICBO

−

−

0.5

μA VCB=24V

IEBO

−

−

0.5

μA VEB=3V

VCE(sat)

−

0.1

0.3

V

IC/IB=10mA/1mA

hFE

82

−

180

−

VCE=6V, IC=1mA

fT

150

300

−

MHz VCE=6V, IE= −1mA, f=100MHz

Cob

−

1.3

2.2

pF VCB=6V, IE=0A, f=1MHz

0.45

2.5 0.5 0.45

5

(1) (2) (3)

Taping specifications

(1) Emitter

(2) Collector

(3) Base

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.B

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