MMBD4448W 查看數據表（PDF） - Yea Shin Technology Co., Ltd
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MMBD4448W Datasheet PDF : 2 Pages
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DATA SHEET
SEMICONDUCTOR
SOT-323 Plastic-Encapsulate DIODE
SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IO: 250 mA
Collector-base voltage
VR: 75 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
MMBD4448W
H
SOT323 Unit:inch(mm)
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
High temperature soldering : 260OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbo
Test conditions
MIN
V(BR) R
IR= 10µA
75
IR
VR=20V
VR=75V
VF
IF=5mA
IF=10mA
IF=100mA
IF=150mA
CD
VR=0V, f=1MHz
trr
IF=IR=10mA
Irr=0.1×IR ,RL=100Ω
MAX
0.025
2.5
0.72
0.855
1
1.25
4
4
UNIT
V
µA
V
pF
nS
http://www.yeashin.com
1
REV.02 20120305
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