2N3906 查看數據表（PDF） - Diotec Semiconductor Germany

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2N3906

Si-Epitaxial-Planar Switching Transistors

Diotec Semiconductor Germany  

2N3906

Characteristics (Tj = 25°C)

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 30 V, - VEB = 3 V

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 30 V, - VEB = 3 V

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 20 V, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 1 MHz

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

- VCC = 3 V, - VBE = 0.5 V

- IC = 10 mA, - IB1 = 1mA

storage time

fall time

- VCC = 3 V, - IC = 10 mA,

- IB1 = - IB2 = 1 mA

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

- ICBX

–

–

50 nA

- IEBV

–

–-

50 nA

fT 250 MHz

–

–

CCBO

–

–

4.5 pF

CEBO

–

–

10 pf

F

–

–

4 dB

td

–

tr

–

ts

–

tf

–

–

35 ns

–

35 ns

–

225 ns

–

75 ns

RthA

< 200 K/W 1)

2N3904

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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© Diotec Semiconductor AG

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