STB13N80K5_13 查看數據表（PDF） - STMicroelectronics

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STB13N80K5_13

N-channel 800 V, 0.37 Ω, 12 A Zener-protected SuperMESH™ 5 Power MOSFET in D²PAK, TO-220FP and TO-220 packages

STMicroelectronics 

STB13N80K5, STF13N80K5, STP13N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

D²PAK, TO-220 TO-220FP

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

Viso

dv/dt (3)

dv/dt(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax )

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

4. VDS ≤ 640 V

± 30

12

12(1)

7.6

7.6 (1)

48

48 (1)

190

35

4

148

2500

4.5

50

-55 to 150

Unit

V

A

A

A

W

A

mJ

V

V/ns

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Value

D²PAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max

0.66

3.57

Rthj-amb Thermal resistance junction-amb max

62.5

Rthj-pcb(1) Thermal resistance junction-pcb max

30

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Unit

°C/W

DocID024348 Rev 3

3/20

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