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零件编号
产品描述 (功能)
BB304M 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
比赛名单
BB304M
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
BB304M Datasheet PDF : 12 Pages
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BB304M
Drain Current vs. Gate1 Voltege
25
V
DS
= 9 V
20
R
G
= 470 k
W
15
6V
5V
4V
10
3V
2V
5
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Drain Current vs. Gate1 Voltege
25
V
DS
= 9 V
20
R
G
= 560 k
W
15
6V
5V
10
4V
3V
2V
5
V
G2S
= 1 V
0
2
4
6
8
10
Q [ g1 d ‡
G1
V
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 9 V
6V
R
G
= 390 k
W
5V
24 f = 1 kHz
4V
3V
2V
18
12
6
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 9 V
6V
R
G
= 470 k
W
5V
24
f = 1 kHz
4V
3V
2V
18
12
6
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
6
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