Typical Characteristics
Static Characteristic
-0.25
COMMON EMITTER
Ta=25℃
-0.20
-0.15
-800uA
-720uA
-640uA
-560uA
-0.10
-0.05
-0.00
-0
-480uA
-400uA
-320uA
-240uA
-160uA
IB=-80uA
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE VCE (V)
-0.9
β=10
V
—— I
CEsat
C
-0.6
-0.3
Ta=100℃
Ta=25℃
-0.0
-1
-10
-100
-600
COLLECTOR CURRENT IC (mA)
-600
COMMON EMITTER
VCE=-10V
-100
I —— V
C
BE
Ta=100℃
-10
Ta=25℃
-1
h
FE
——
I
C
500
COMMON EMITTER
VCE=-10V
400
300
Ta=100℃
200
Ta=25℃
100
0
-0.1
-1
-10
-100
-600
COLLECTOR CURRENT IC (mA)
-1.2
β=10
V
—— I
BEsat
C
-0.8
Ta=25℃
Ta=100℃
-0.4
-0.0
-1
100
10
-10
-100
COLLECTOR CURRENT IC (mA)
C / C —— V / V
ob ib
CB EB
Cib
-600
f=1MHz
I =0/ I =0
E
C
Ta=25℃
Cob
-0.1
1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE VBE (V)
REVERSE VOLTAGE V (V)
P —— T
300
c
a
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2