BUK202-50Y 查看數據表（PDF） - Philips Electronics
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BUK202-50Y Datasheet PDF : 13 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK202-50Y
VSG / V
8.0
VIG / V =
7.5
5
0
7.0
BUK202-50Y
6.5
-60
-20
20
60
100
140
180
Tj / C
Fig.22. Typical status clamping voltage, VSG = f(Tj).
parameter VIG; conditions IS = 100 µA, VBG = 13 V
IL(OC) / A
1.0
BUK202-50Y
0.8
max.
0.6
typ.
0.4
0.2
min.
0
-60
-20
20
60
100
140
180
Tj / C
Fig.23. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V
VBG(TO) / V
5
BUK202-50Y
4
on
3
off
2
1
0
-60
-20
20
60
100
140
180
Tj / C
Fig.24. Supply typical undervoltage thresholds.
VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 100 mA
VBG(LP) / V
47
BUK202-50Y
46
off
45
on
44
43
-60
-20
20
60
100
140
180
Tj / C
Fig.25. Supply typical overvoltage thresholds.
VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 100 mA
VBG / V
65
BUK202-50Y
60
IG =
1 mA
10 uA
55
50
-60
Fig.26.
-20
20
60
100
140
180
Tj / C
Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
50 IL / A
BUK202-50Y
40
30
20
10
0
-24
-20
-16
-12
-8
-4
0
VLG / V
Fig.27. Typical negative load clamping characteristic.
IL = f(VLG); conditions VIG = 0 V, tp = 300 µs, 25 ˚C
April 1995
9
Rev 1.100
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