LL4448 查看數據表（PDF） - Diode Semiconductor Korea
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LL4448 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
LL4448
FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS
AMBIENT TEMPERATURE
mW
1000
900
800
700
Ptot 600
500
400
300
200
100
0
0 25
100
175
200℃
TA
FIG.2-- FORWARD CHARACTERISTICS
mA
3
10
2
10
IF
10
1
TJ =100OC
TJ =25OC
-1
10
-2
10
0
1
2V
VF
FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION
100
IFRM 10
1
0.1
0.2
0.3
0.1
-5
10
n=0
-3
10
I
V=tp/T
T=1/tp
tp
IFRM
T
-2
-1
10
10
1
10S
tp
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