NTS4001NT1G 查看數據表（PDF） - ON Semiconductor

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NTS4001NT1G

Small Signal MOSFET

ON Semiconductor 

NTS4001N, NVS4001N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 100 mA

30

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 2)

IDSS

IGSS

VGS = 0 V, VDS = 30 V

VDS = 0 V, VGS = ±10 V

Gate Threshold Voltage

Gate Threshold

Temperature Coefficient

VGS(TH)

VGS = VDS, ID = 100 mA

0.8

VGS(TH)/TJ

Drain−to−Source On Resistance

Forward Transconductance

CHARGES AND CAPACITANCES

RDS(on)

gFS

VGS = 4.0 V, ID = 10 mA

VGS = 2.5 V, ID = 10 mA

VDS = 3.0 V, ID = 10 mA

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

Threshold Gate Charge

QG(TH)

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

SWITCHING CHARACTERISTICS (Note 3)

VGS = 0 V, f = 1.0 MHz,

VDS = 5.0 V

VGS = 5.0 V, VDS = 24 V,

ID = 0.1 A

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

td(ON)

tr

td(OFF)

tf

VGS = 4.5 V, VDD = 5.0 V,

ID = 10 mA, RG = 50 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

TJ = 25°C

IS = 10 mA

TJ = 125°C

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 8.0 A/ms,

IS = 10 mA

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

Typ

60

1.2

−3.4

1.0

1.5

80

20

19

7.25

0.9

0.2

0.3

0.2

17

23

94

82

0.65

0.43

5.0

Max

Unit

V

mV/ °C

1.0

mA

±1.0

mA

1.5

V

mV/ °C

1.5

W

2.0

mS

33

pF

32

12

1.3

nC

ns

0.7

V

ns

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