1N4148_ 查看數據表（PDF） - Micro Commercial Components
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1N4148_ Datasheet PDF : 3 Pages
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MCC
omponents
21201 Itasca Street Chatsworth
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$% !"#
1N4148
Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
500mW 100 Volt
Silicon Epitaxial Diode
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35 °C/W Junction To Ambient
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR
75V
VRM
100V
Average Rectified
Current
IO
150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
500mW
200°C
Peak Forward Surge
IFSM
Current
500mA t<1s
Maximum
Instantaneous
VF
1.0V IFM = 10mA;
Forward Voltage
TJ = 25°C*
Maximum DC
VR=20Volts
Reverse Current At
IR
25nA
TJ = 25°C
Rated DC Blocking
Voltage
50µA
5uA
TJ = 150°C
VR=75Volts
Typical Junction
CJ
4pF Measured at
Capacitance
1.0MHz, VR=4.0V
Reverse Recovery
Trr
4nS IF=10mA
Time
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
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