2SC1971 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

2SC1971

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC1971

DESCRIPTION

·High Power Gain-

: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V

·High Reliability

APPLICATIONS

·Designed for RF power amplifiers on VHF band mobile radio

applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage RBE= ∞

17

V

VEBO Emitter-Base Voltage

4

V

IC

Collector Current

Collector Power Dissipation

@TC=25℃

PC

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

2

A

12.5

W

1.5

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W

Rth j-c Thermal Resistance,Junction to Case

10 ℃/W

isc Website：www.iscsemi.cn

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