IRF234 查看數據表（PDF） - Inchange Semiconductor
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IRF234 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4.1A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS=0
VSD
Diode Forward Voltage
IS=8.1A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
RGS=15Ω
ID=5A;
VDD=90V;
RL=15Ω
isc Product Specification
IRF234
MIN TYPE MAX UNIT
250
V
2.0
4.0
V
0.45
Ω
±100 nA
250
uA
2.0
V
600
52
pF
180
23
35
9.1
14
ns
19
29
31
47
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