C1061 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

比赛名单

C1061

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBE

Base-emitter on voltage

IC=1A ; VCE=4V

ICBO

Collector cut-off current

VCB=25V;IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE-1

DC current gain

IC=0.1A ; VCE=4V

hFE-2

DC current gain

IC=1A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=4V

u hFE-2 classifications

A

B

C

D

35-70 60-120 100-200 160-320

Product Specification

2SC1061

MIN TYP. MAX UNIT

50

V

50

V

4

V

1.0

V

1.5

V

0.1

mA

0.1

mA

35

35

320

5.0

MHz

2

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