2SJ587 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ587

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ587

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

Pulse Test

1.6

1.2

0.8

I D = -50mA

0.4

-25mA

-10m A

0

0

-2

-4

-6

-8 -10

Gate to Source Voltage VGS (V)

Static Drain to Sourceon State

Resistance vs. Drain Current

50

Pulse Test -2.5 V

20

10

VGS = -4 V

5

2

1.0

0.05

-0.01

-0.02

-0.05

-0.1

Drain Current I D (A)

Static Drain to Source on State

Resistance vs. Temperature

25

I D = -25m A

20

-10m A

15

-2.5V

10

-10m A, -25m A

VGS = -4V

5

0

Pulse Test

–40

0

40 80 120 160

Case Temperature Tc ( °C)

Forward TransferAdmittance

vs. Drain Current

0.5

VDS=-10V

Pulse Test

0.2

Tc = -25 °C

0.1

0.05

0.02

0.01

0.005

-0.01

25 °C

75 °C

-0.02

-0.05

-0.1

Drain Current I D (A)

4

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