2SJ588 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

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2SJ588

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ588

Silicon P Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)

RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)

• 4 V gate drive device.

Outline

SPAK

ADE-208-802 (Z)

1st.Edition.

June 1999

D

3

2

G

1

S

123

1. Source

2. Drain

3. Gate

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