2SJ588 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ588

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ588

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Ratings

Unit

-30

V

±20

V

-100

mA

-400

mA

-100

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Drain to source breakdown V(BR)DSS -30

—

voltage

Gate to source breakdown V(BR)GSS ±20

—

voltage

Gate to source leak current IGSS

—

—

Zero gate voltege drain

I DSS

—

—

current

Gate to source cutoff voltage VGS(off)

-1.3

—

Static drain to source on state RDS(on)

—

2.8

resistance

RDS(on)

—

5.7

Forward transfer admittance |yfs|

68

105

Input capacitance

Ciss

—

25

Output capacitance

Coss

—

20

Reverse transfer capacitance Crss

—

8

Turn-on delay time

t d(on)

—

10

Rise time

tr

—

15

Turn-off delay time

t d(off)

—

40

Fall time

tf

—

45

Note: 2. Pulse test

See characteristics curves of 2SJ575

Max

—

—

±5

-1

-2.3

3.3

7.9

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

mS

pF

pF

pF

ns

ns

ns

ns

Test Conditions

ID = -100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = -30 V, VGS = 0

ID = -10µA, VDS = -5 V

ID = -50 mA,VGS = -10 V Note 2

ID = -50 mA,VGS = -4 V Note 2

ID = -50 mA, VDS = -10 V Note 2

VDS = -10 V

VGS = 0

f = 1 MHz

ID = -50 mA, VGS = -10 V

RL = 200Ω

2

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