2SA1960 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SA1960

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown

voltage

V(BR)CBO

–80

Collector to emitter breakdown V(BR)CEO –80

voltage

Collector to base cutoff current ICBO

—

Emitter to base cutoff current IEBO

—

DC current transfer ratio

hFE

20

Gain bandwidth product

fT

1.1

Emitter input capacitance

Cib

—

Collector output capacitance Cob

—

Typ Max Unit

—

—

V

—

—

V

—

–1.0 µA

—

–10 µA

60

—

1.3 —

GHz

14.5 18

pF

2.9 4.0 pF

2SA1960

Test conditions

IC = –100 µA

IE = 0

IC = –1 mA

RBE = ∞

VCB = –60 V

IE = 0

VEB = –3 V

IC = 0

VCE = –5 V, IC = –50 mA

Pulse test

VCE = –10 V

IC = –50 mA

VEB = 0, IC = 0

f = 1 MHz

VCB = –10 V, IE = 0

f = 1 MHz

3

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