MS1202 查看數據表（PDF） - Microsemi Corporation
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MS1202 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
FM MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 7.0 W
• GP = 8.4 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt
class C applications in the 118 – 136 MHz frequency band and 28 volt FM
ground station applications. Gold metalization and emitter ballast
resistors provide long term product ruggedness and reliability.
MS1202
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
PDISS
TJ
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Dissipation
Junction Temperature
IC
Device Current
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Rev A January 2009
Value
65
35
4.0
15
200
1.0
-65 to +200
11.7
Unit
V
V
V
W
°C
A
ºC
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
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