BAT54RLT1 查看數據表（PDF） - Leshan Radio Company
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BAT54RLT1 Datasheet PDF : 2 Pages
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LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
3
CATHODE
1
ANODE
DEVICE MARKING
BAT54RLT1 = LV3
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
PF
@ T A = 25°C
Derate above 25°C
Operating Junction
TJ
Temperature Range
Storage Temperature Range
T stg
Value
30
Unit
Volts
200
mW
2.0
mW/°C
–55 to +125
°C
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Symbol
V (BR)R
CT
IR
VF
VF
VF
t rr
VF
VF
Min
Typ
30
—
—
7.6
—
0.5
—
0.22
—
0.41
—
0.52
—
—
—
0.29
—
0.35
BAT54RLT1
30 VOLTS
SILICON HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Max
Unit
—
Volts
10
pF
2.0
µAdc
0.24
Vdc
0.5
Vdc
1.0
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
G11–1/2
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